Method of forming a capacitor

ABSTRACT

A method of forming a capacitor includes, a) providing a node to which electrical connection to a first capacitor plate is to be made; b) then, providing a finned lower capacitor plate in ohmic electrical connection with the node using no more than one photomasking step; and c) providing a capacitor dielectric layer and a conductive second capacitor plate layer over the conductive layer. Such is preferably accomplished by, i) providing a layer of conductive material outwardly of the node; ii) providing a first masking layer over the conductive material layer; iii) etching a first opening into the first masking layer over the node; iv) providing a second masking layer over the first masking layer to a thickness which less than completely fills the first opening; v) anisotropically etching the second masking layer to define a spacer received laterally within the first opening and thereby defining a second opening relative to the first masking layer which is smaller than the first opening; vi) after said anisotropically etching, etching unmasked first masking layer material away; vii) after said anisotropically etching, etching through the conductive material layer to extend the second opening to the node, the node and conductive layer being electrically isolated from one another after the conductive material layer etching; viii) plugging the extended second opening with an electrically conductive plugging material, the plugging material electrically interconnecting the node and conductive layer. Novel capacitor constructions are also disclosed.

RELATED PATENT DATA

This patent resulted from a continuation application of U.S. patentapplication Ser. No. 08/582,385, filed on Jan. 3, 1996 now U.S. Pat. No.6,218,237.

TECHNICAL FIELD

This invention relates generally to capacitor formation in semiconductorwafer processing, and to resultant capacitor constructions.

BACKGROUND OF THE INVENTION

As DRAMs increase in memory cell density, there is a continuingchallenge to maintain sufficiently high storage capacitance despitedecreasing cell area. Additionally, there is a continuing goal tofurther decrease cell area.

The principal way of increasing cell capacitance is through cellstructure techniques. Such techniques include three-dimensional cellcapacitors, such as trenched or stacked capacitors. This inventionconcerns stacked capacitor cell constructions, including what arecommonly known as crown or cylindrical container stacked capacitors.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

FIG. 1 is a diagrammatic sectional view of a semiconductor waferfragment at one processing step in accordance with the invention.

FIG. 2 is a view of the FIG. 1 wafer fragment at a processing stepsubsequent to that shown by FIG. 1.

FIG. 3 is a view of the FIG. 1 wafer fragment at a processing stepsubsequent to that shown by FIG. 2.

FIG. 4 is a view of the FIG. 1 wafer fragment at a processing stepsubsequent to that shown by FIG. 3.

FIG. 5 is a view of the FIG. 1 wafer fragment at a processing stepsubsequent to that shown by FIG. 4.

FIG. 6 is a view of the FIG. 1 wafer fragment at a processing stepsubsequent to that shown by FIG. 5.

FIG. 7 is a view of the FIG. 1 wafer fragment at a processing stepsubsequent to that shown by FIG. 6.

FIG. 8 is a view of the FIG. 1 wafer fragment at a processing stepsubsequent to that shown by FIG. 7.

FIG. 9 is a view of the FIG. 1 wafer fragment at a processing stepsubsequent to that shown by FIG. 8.

FIG. 10 is a view of the FIG. 1 wafer fragment at a processing stepsubsequent to that shown by FIG. 9.

FIG. 11 is a view of the FIG. 1 wafer fragment at a processing stepsubsequent to that shown by FIG. 10.

FIG. 12 is a view of the FIG. 1 wafer fragment at a processing stepsubsequent to that shown by FIG. 11.

FIG. 13 is a diagrammatic sectional view of an alternate embodimentsemiconductor wafer fragment at a processing step in accordance with theinvention.

FIG. 14 is a view of the FIG. 13 wafer fragment at a processing stepsubsequent to that shown by FIG. 13.

FIG. 15 is a view of the FIG. 13 wafer fragment at a processing stepsubsequent to that shown by FIG. 14.

FIG. 16 is a view of the FIG. 13 wafer fragment at a processing stepsubsequent to that shown by FIG. 15.

FIG. 17 is a diagrammatic sectional view of another alternate embodimentsemiconductor wafer fragment at a processing step in accordance with theinvention.

FIG. 18 is a view of the FIG. 17 wafer fragment at a processing stepsubsequent to that shown by FIG. 17.

FIG. 19 is a view of the FIG. 17 wafer fragment at a processing stepsubsequent to that shown by FIG. 18.

FIG. 20 is a view of the FIG. 17 wafer fragment at a processing stepsubsequent to that shown by FIG. 19.

FIG. 21 is a view of the FIG. 17 wafer fragment at a processing stepsubsequent to that shown by FIG. 20.

FIG. 22 is a diagrammatic sectional view of yet another alternateembodiment semiconductor wafer fragment at a processing step inaccordance with the invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

This disclosure of the invention is submitted in furtherance of theconstitutional purposes of the U.S. Patent Laws “to promote the progressof science and useful arts” (Article 1, Section 8).

In accordance with one aspect of the invention, a method of forming acapacitor comprises the following steps:

providing a node to which electrical connection to a first capacitorplate is to be made;

after providing the node, providing a finned lower capacitor plate inohmic electrical connection with the node using no more than onephotomasking step; and

providing a capacitor dielectric layer and a conductive second capacitorplate layer over the conductive layer.

In accordance with another aspect of the invention, a method of forminga capacitor comprises the following steps:

providing a node to which electrical connection to a first capacitorplate is to be made;

providing a layer of conductive material outwardly of the node;

providing a first masking layer over the conductive material layer;

etching a first opening into the first masking layer over the node;

providing a second masking layer over the first masking layer to athickness which less than completely fills the first opening;

anisotropically etching the second masking layer to define a spacerreceived laterally within the first opening and thereby defining asecond opening relative to the first masking layer which is smaller thanthe first opening;

after anisotropically etching the second masking layer, etching unmaskedfirst masking layer material away;

after anisotropically etching the second masking layer, etching throughthe conductive material layer to extend the second opening to the node,the node and conductive layer being electrically isolated from oneanother after the conductive material layer etching;

plugging the extended second opening with an electrically conductiveplugging material, the plugging material electrically interconnectingthe node and conductive layer; and

providing a capacitor dielectric layer and a conductive second capacitorplate layer over the conductive layer.

Referring to FIG. 1, a semiconductor wafer fragment in process isindicated generally with reference numeral 10. Such comprises a bulkmonocrystalline silicon substrate 12 having diffusion regions 13, 14, 15provided therein. A pair of word lines 16 and 17 are provided as shown.Such comprise a gate oxide region 18, a polysilicon conductive region19, a higher conductivity silicide region 20, and an electricallyinsulative oxide or nitride cap 21. An etch stop layer 22 is provided,to an example thickness of 500 Angstroms. A preferred material for layer22 is Si₃N₄, the optional use of which will be apparent subsequently.

Referring to FIG. 2, an insulating dielectric layer 24 is provided overetch stop layer 22. Such is planarized, and a storage node contact 25opened therethrough to outwardly expose diffusion region 14.

Referring to FIG. 3, a layer of conductive material is deposited andplanarized back relative to oxide layer 24 to define a pillar 26 whichprojects from diffusion region 14 provided in bulk semiconductivesubstrate 12. For purposes of the continuing discussion, pillar 26comprises an outer surface 28 which constitutes a node to whichelectrical connection to a first capacitor plate is to be made. Anexample preferred plugging material 26 is conductively dopedpolysilicon.

Referring to FIG. 4, a plurality of alternating first layers 30 andsecond layers 32 are provided outwardly relative to node 28. Example andpreferred thicknesses for layers 30 and 32 are from 200 Angstroms to 700Angstroms. The material of first layers 30 is chosen to be selectivelyetchable relative to node 28, and also to material of second layer 32.An example and preferred material for layers 30 is undoped SiO₂deposited by decomposition of tetraethylorthosilicate (TEOS). Secondlayer material 32 is chosen to be selectively etchable relative to firstlayer material 30 and also be electrically conductive. An example andpreferred material for layer 32 is conductively doped polysilicon, withthe material of layer 32 and plugging material 26 in the preferredembodiment thereby constituting the same material. Further, the firstlayer material 30 is preferably entirely sacrificial, but neverthelesspreferably constitutes an electrically insulative material. Thealternating stack of first and second layers 30 and 32 are shown asterminating in an upper layer 30, although an upper layer 32 couldultimately be provided.

Referring to FIG. 5, a first masking layer 34 is provided over thealternating layers 30 and 32, and thus over and outwardly relative tosecond layer material 32. In the described and preferred embodiment aplurality of alternating layers 30 and 32 are provided for production ofa multi-finned capacitor construction as will be apparent subsequently.In accordance with one alternate aspect of the invention, only a singlefirst layer 30 and a single second layer 32 might be utilized. A firstopening 35 is etched into first masking layer 34 over node 28. Anexample and preferred material for layer 34 is a doped oxide depositedto an example thickness of 2,000 Angstroms.

Referring to FIG. 6, a second masking layer 36 is provided over firstmasking layer 34 to a thickness which less than completely fills firstopening 35. An example and preferred material for layer 36 is Si₃N₄.

Referring to FIG. 7, second masking layer 36 is anisotropically etchedto define a spacer 38 received laterally within first opening 35, andthereby defining a second opening 39 relative to first masking layer 34which is smaller than first opening 35.

Referring to FIG. 8, unmasked first layer material 34 has been etchedaway. An example etch for stripping layer 34 where it comprisesborophosphosilicate glass (BPSG), layer 30 comprises undoped SiO₂ andspacer 38 comprises Si₃N₄ comprises a wet etch with a HF solution.

Referring to FIG. 9, and with spacer 38 in place, the alternating layers30 and 32 are etched as shown to define a desired outline (as will beapparent subsequently) of a first capacitor plate and to extend secondopening 39 through such alternating layers to node 28. Such etching ispreferably conducted for both layers to be highly anisotropic as shownand conducted such that each alternating etch is selective relative tothe immediate underlying layer. During such collective etching, spacer38 constitutes an etching mask. Where spacer 38 comprises Si₃N₄, layers30 comprise undoped SiO₂, and layers 32 comprise conductively dopedpolysilicon, an example etch which will remove such oxide selectivelyrelative to the nitride and polysilicon is using a fluorine andhydrocarbon plasma chemistry which is preferably carbon rich. For thesame materials, an example etch which will anisotropically andselectively remove polysilicon of layer 32 anisotropically andselectively relative to nitride and SiO₂ is chlorine and HBr plasma.

Such etching effectively defines the illustrated etched layers 32 toconstitute a plurality of laterally projecting electrically conductivefirst capacitor plate fins. The illustrated etch stopping effectrelative to insulating layer 24 will not occur where the material offirst layers 30 and layer 24 are the same, but will occur where the etchcharacteristics of layers 30 and 24 can be conducted differentlyrelative to one another.

Referring to FIG. 10, spacer 38 has been etched away, and anelectrically conductive plugging material 44 provided within secondopening 39. Accordingly, plugging material 44 electrically interconnectsnode 28 with the illustrated plurality of second layers/fins 32. Anexample and preferred technique for providing such layer is to deposit apolycrystalline layer to fill the void and subsequently conduct ananisotropic polycrystalline etch selective to oxide using chlorine andHBr plasma chemistry. Thus in a most preferred embodiment, the materialof node 28, plugging material 44 and second layer material 32 allconstitute the same material.

Referring to FIG. 11, first layer material 30 is selectivelyisotropically etched relative to second layer material 32. Preferably,the material of layers 30 and 24 constitutes the same material such thatetching of layer 24 also occurs, with etch stop layer 22 acting as anetch stop relative to the word lines and bulk substrate as shown. Wherelayers 24 and 30 constitute undoped SiO₂, an example etching chemistryis an HF solution. The preferred result is the illustrated multi,horizontally finned lower capacitor plate 50 which is effectively inohmic electrical connection relative the node 28.

Referring to FIG. 12, a capacitor dielectric layer 52 and a subsequentelectrically conductive second capacitor plate layer 54 are providedover the illustrated conductive second layers/fins 32 of first capacitorplate 50. This constitutes but one example of forming a capacitorutilizing no more than one photomasking step in producing a finned(preferably multi finned) lower capacitor plate in ohmic electricalconnection after providing a node for connection thereto.

In contradistinction to the prior art, only one photomasking step (thatto form first opening 35) has been utilized to define all of firstcapacitor plate 50 between the step of providing node 28 and subsequentsteps wherein capacitor dielectric and second conductive plates areprovided. Further, the stem/plug 44 diameter can be provided to be lessthan the minimum photolithograpic feature size/dimension due to themaskless anisotropic etch by which the void for the plug is formed.Thus, more of the available capacitor volume can be consumed bysurface-area-enhancing fins than from the stem or plug 44.

An example alternate embodiment is described with reference to FIGS.13-16. Like numerals from the first described embodiment are utilizedwhere appropriate, with differences being indicated by the suffix “a” orwith different numerals. FIG. 13 illustrates a wafer fragment 10 a at aprocessing step immediately subsequent to that depicted by FIG. 8 in thefirst described embodiment. Here, a third masking layer 60 is providedover spacer 38. Layer 60 can be the same as or different from thematerial of layer 38.

Referring to FIG. 14, third masking layer 60 is anisotropically etchedto form a secondary spacer 62 laterally outward of first stated spacer38.

Referring to FIG. 15, spacers 62 and 38 are used collectively as anetching mask during the second and first layer etchings to produce themodified construction which extends considerably further laterallyoutward beyond the boundaries of the first described embodimentcapacitor. The same above example etch chemistries can be utilized foreffecting the FIG. 15 etch construction where layer 62 comprises BPSG.

Referring to FIG. 16, spacers 62 and 38 etched away, polysiliconplugging material 44 is provided, and first layers 30 are isotropicallyetched, thus resulting in the modified illustrated first capacitor plateconstruction 50 a.

The above described alternate processing enables placement of adjacentcapacitors of a DRAM array closer to one another than the minimumavailable photolithographic feature size. Prior art processing typicallyprovides the closest spacing between adjacent capacitor edges as beingthe minimum available photolithographic feature width. In accordancewith the above described alternate preferred embodiment, closerplacement of such capacitor edges may be possible due to the outercapacitor plate edge being defined by a photolithographic feature at itsminimum feature. Accordingly, the mask utilized to produce the maskopening which produces the first corresponding opening of the adjacentcapacitor can be placed closer to the edge of the adjacent opening ofthe described and illustrated capacitor. Such is shown by way of examplein FIG. 22 with respect to a wafer fragment 10 c. A pair of finnedcapacitors 50 a and 50 c are shown separated by a spacing “s”, which canbe less than the minimum available photolithographic feature size.

Yet another alternate embodiment method is described with reference toFIGS. 17-21. Like numerals from the first described embodiment areutilized where appropriate, with differences being indicated by thesuffix “b” or with different numerals. FIG. 17 is the same as FIG. 6,but for provision of an additional masking layer 70 over first maskinglayer 34. Layer 70 is preferably provided where layers 30 and 34constitute the same material, as will be apparent from FIG. 18. As thereshown, anisotropic etching of second masking layer 36 has occurred toform second opening 39, with subsequent etching of layers 30 and 32having been conducted to extend such opening to node 28. During suchextension etching, layer 34 remains in place with additional maskinglayer 70 restricting etching of layer 34 while layers 30 are beingetched.

Referring to FIG. 19, a conductive plugging layer 44 b is deposited.Referring to FIG. 20, layer 44 b is etched or planarized back as shown,and masking layers 70 and 34 also etched. Referring to FIG. 21, layers30 and 32 are etched to define the capacitor outline, with pluggingmaterial 44 b also being etched in the process where it is provided tobe the same material as layers 32. Thus in this described embodiment,the unmasked first masking layer is etched after extending the secondopening to the node where in the first described embodiment it isconducted before.

In compliance with the statute, the invention has been described inlanguage more or less specific as to structural and methodical features.It is to be understood, however, that the invention is not limited tothe specific features shown and described, since the means hereindisclosed comprise preferred forms of putting the invention into effect.The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

What is claimed is:
 1. A method of forming a capacitor comprising thefollowing steps: providing an electrically conductive node supported bya semiconductor substrate; forming an insulative material layer over thenode; forming a conductive material layer over the insulative materiallayer; forming a first masking material over the conductive materiallayer; etching a first opening into the first masking material; forminga spacer within the first opening to narrow the opening; extending thenarrowed opening through the conductive material layer and insulativematerial layer, and to the node; forming an electrically conductive masswithin the extended opening to electrical interconnect the node and theconductive material layer; and providing a capacitor dielectric layerand a conductive capacitor plate over the conductive material layer; thecapacitor dielectric layer, conductive capacitor plate and conductivematerial layer together defining the capacitor structure.
 2. A method offorming a capacitor, comprising the following steps: providing a firstlayer over a substrate; providing a second layer over the first layer,the second layer being selectively etchable relative to the first layerand being electrically conductive; providing a first masking materialover the second layer; forming a first opening through the first maskingmaterial; forming a spacer received laterally within the first opening;the spacer defining a second opening relative to the first maskingmaterial which is smaller than the first opening; removing the firstmasking material; extending the second opening through the first andsecond layers to the substrate; forming an electrically conductivematerial within the extended second opening; selectively etching thefirst layer relative to the second layer to remove the first layer; andproviding a dielectric layer and a capacitor plate layer over the secondlayer; the dielectric layer, capacitor plate layer and second layertogether defining a capacitor construction.
 3. The method of forming acapacitor of claim 2 wherein the substrate comprises a conductive nodesupported by a semiconductive material.
 4. The method of forming acapacitor of claim 2 wherein the first layer is electrically insulative.5. The method of forming a capacitor of claim 2 wherein the first layerpredominately comprises SiO₂.
 6. The method of forming a capacitor ofclaim 2 wherein the second layer comprises conductively dopedpolysilicon.
 7. The method of forming a capacitor of claim 2 wherein thespacer comprises Si₃N₄.
 8. A method of forming a capacitor comprisingthe following steps: providing an electrically conductive node supportedby a semiconductor substrate; forming a conductive material layeroutwardly of the node; forming a first masking material over theconductive material layer; etching a first opening into the firstmasking material; forming a spacer received laterally within the firstopening; the spacer defining a second opening relative to the firstmasking material which is smaller than the first opening; removing thefirst masking material; extending the second opening through theconductive material layer and to the node, the node and conductivematerial layer being electrically isolated from one another afterextending the opening; forming an electrically conductive mass withinthe second opening to electrical interconnect the node and theconductive material layer; and providing a capacitor dielectric layerand a conductive capacitor plate over the conductive material layer. 9.The method of forming a capacitor of claim 8 wherein the conductivematerial layer and the node comprise the same material.
 10. The methodof forming a capacitor of claim 8 wherein the electrically conductivemass, the node and the conductive material layer all comprise the samematerial.
 11. The method of forming a capacitor of claim 8 wherein thespacer comprises Si₃N₄.
 12. The method of forming a capacitor of claim 8further comprising after etching through the layer of conductivematerial layer, removing the spacer.
 13. A method of forming a capacitorcomprising the following steps: providing a node supported by amonocrystalline silicon substrate; providing a first layer of materialover the node, the first layer of material being selectively etchablerelative to the node; providing a second layer of material over thefirst layer, the second layer of material being selectively etchablerelative to the first layer of material and being electricallyconductive; providing a first masking layer over the second layer ofmaterial; etching a first opening into the first masking layer over thenode; providing a second masking layer over the first masking layer to athickness which less than completely fills the first opening;anisotropically etching the second masking layer to define a spacerreceived laterally within the first opening and thereby defining asecond opening relative to the first masking layer which is smaller thanthe first opening; after anisotropically etching the second maskinglayer, selectively anisotropically etching the second layer of materialrelative to the first layer of material; after etching the second layermaterial, selectively etching the first layer of material relative tothe node to extend the second opening to the node; plugging the extendedsecond opening with an electrically conductive plugging material, theplugging material electrically interconnecting the node and secondlayer; after extending the second opening to the node, selectivelyisotropically etching the first layer material relative to the secondlayer material; and providing a capacitor dielectric layer and aconductive second capacitor plate layer over the conductive secondlayer.
 14. The method of forming a capacitor of claim 13 wherein thefirst layer is electrically insulative.
 15. The method of forming acapacitor of claim 13 wherein the first layer comprises SiO₂.
 16. Themethod of forming a capacitor of claim 13 wherein the second layermaterial constitutes the same material as that of the node.
 17. Themethod of forming a capacitor of claim 13 wherein the plugging material,the node and the second layer of material all constitute the samematerial.
 18. The method of forming a capacitor of claim 13 wherein thesecond masking material comprises Si₃N₄.
 19. The method of forming acapacitor of claim 13 wherein the step of selectively etching the firstlayer comprises anisotropically etching the first layer.
 20. The methodof forming a capacitor of claim 13 further comprising providing aplurality of alternating of the first and second layers outwardlyrelative to the node, and providing the first and second masking layersand first and second openings outwardly thereof; the method furthercomprising alternatingly anisotropically etching the respective secondand first layers to extend the second opening therethrough to the node;and the step of isotropically etching the first layer material relativeto the second layer material defining a plurality of laterallyprojecting electrically conductive second layer fins.
 21. The method offorming a capacitor of claim 20 wherein the first layer is electricallyinsulative.
 22. The method of forming a capacitor of claim 20 whereinthe plugging material, the node and the second layer material allconstitute the same material.
 23. A method of forming a capacitorcomprising the following steps: providing a node supported by amonocrystalline silicon substrate; providing a conductive material layerover of the node; providing a first masking layer over the conductivematerial layer; etching a first opening into the first masking layerover the node; providing a second masking layer over the first maskinglayer to a thickness which less than completely fills the first opening;anisotropically etching the second masking layer to define a spacerreceived laterally within the first opening and thereby defining asecond opening relative to the first masking layer which is smaller thanthe first opening; after anisotropically etching the second maskinglayer, etching through the conductive material layer to extend thesecond opening to the node, the node and conductive layer beingelectrically isolated from one another after the conductive materiallayer etching; plugging the extended second opening with an electricallyconductive plugging material, the plugging material electricallyinterconnecting the node and conductive layer; and providing a capacitordielectric layer and a conductive second capacitor plate layer over theconductive layer.
 24. The method of forming a capacitor of claim 23wherein the conductive material layer constitutes the same material asthat of the node.
 25. The method of forming a capacitor of claim 23wherein the plugging material, the node and the conductive materiallayer all constitute the same material.
 26. The method of forming acapacitor of claim 23 wherein the second masking material comprisesSi₃N₄.